Kinetics vs. thermodynamics: walking on the line for a five-fold increase in MnSi Curie temperature.

Green and digital transitions will induce tremendous demand for metals and semiconductors. This raises concerns about the availability of materials in the rather near future. Addressing this challenge requires an unprecedented effort to discover new materials that are more sustainable and also to expand their functionalities beyond conventional material limits. From this point of view, complex systems combining semiconductor and magnetic properties in a single material lay the foundations for future nanoelectronics devices. Through a combination of out-of-stable equilibrium processes, we achieved fine control over the crystallisation of non-stoichiometric MnSix (x = 0.92). The Curie temperature shows non-monotonous evolution with crystallisation. At the earliest and final stages, the Curie temperature is comparable with stoichiometric MnSi (TC = 30 K). At the intermediate stage, while the material is crystalline and remains non-stoichiometric, a remarkable fivefold increase in Curie temperature (TC = 150 K) is observed. This finding highlights the potential for controlling the metastability of materials as a promising and relatively unexplored pathway to enhance material properties, without relying on critical materials such as rare earth elements.

Interfacial engineering of ferromagnetism in wafer-scale van der Waals Fe4GeTe2 far above room temperature.

Despite recent advances in exfoliated vdW ferromagnets, the widespread application of 2D magnetism requires a Curie temperature (Tc) above room temperature as well as a stable and controllable magnetic anisotropy. Here we demonstrate a large-scale iron-based vdW material Fe4GeTe2 with the Tc reaching ~530 K. We confirmed the high-temperature ferromagnetism by multiple characterizations. Theoretical calculations suggested that the interface-induced right shift of the localized states for unpaired Fe d electrons is the reason for the enhanced Tc, which was confirmed by ultraviolet photoelectron spectroscopy. Moreover, by precisely tailoring Fe concentration we achieved arbitrary control of magnetic anisotropy between out-of-plane and in-plane without inducing any phase disorders. Our finding sheds light on the high potential of Fe4GeTe2 in spintronics, which may open opportunities for room-temperature application of all-vdW spintronic devices.

Current-Induced Spin Torques on Single GdFeCo Magnetic Layers.

Spintronics exploit spin-orbit coupling (SOC) to generate spin currents, spin torques, and, in the absence of inversion symmetry, Rashba and Dzyaloshinskii-Moriya interactions. The widely used magnetic materials, based on 3d metals such as Fe and Co, possess a small SOC. To circumvent this shortcoming, the common practice has been to utilize the large SOC of nonmagnetic layers of 5d heavy metals (HMs), such as Pt, to generate spin currents and, in turn, exert spin torques on the magnetic layers. Here, a new class of material architectures is introduced, excluding nonmagnetic 5d HMs, for high-performance spintronics operations. Very strong current-induced torques exerted on single ferrimagnetic GdFeCo layers, due to the combination of large SOC of the Gd 5d states and inversion symmetry breaking mainly engineered by interfaces, are demonstrated. These "self-torques" are enhanced around the magnetization compensation temperature and can be tuned by adjusting the spin absorption outside the GdFeCo layer. In other measurements, the very large emission of spin current from GdFeCo, 80% (20%) of spin anomalous Hall effect (spin Hall effect) symmetry is determined. This material platform opens new perspectives to exert "self-torques" on single magnetic layers as well as to generate spin currents from a magnetic layer.

Engineering Co2 MnAlx Si1- x Heusler Compounds as a Model System to Correlate Spin Polarization, Intrinsic Gilbert Damping, and Ultrafast Demagnetization.

Engineering of magnetic materials for developing better spintronic applications relies on the control of two key parameters: the spin polarization and the Gilbert damping, responsible for the spin angular momentum dissipation. Both of them are expected to affect the ultrafast magnetization dynamics occurring on the femtosecond timescale. Here, engineered Co2 MnAlx Si1- x Heusler compounds are used to adjust the degree of spin polarization at the Fermi energy, P, from 60% to 100% and to investigate how they correlate with the damping. It is experimentally demonstrated that the damping decreases when increasing the spin polarization from 1.1 × 10-3 for Co2 MnAl with 63% spin polarization to an ultralow value of 4.6 × 10-4 for the half-metallic ferromagnet Co2 MnSi. This allows the investigation of the relation between these two parameters and the ultrafast demagnetization time characterizing the loss of magnetization occurring after femtosecond laser pulse excitation. The demagnetization time is observed to be inversely proportional to 1 - P and, as a consequence, to the magnetic damping, which can be attributed to the similarity of the spin angular momentum dissipation processes responsible for these two effects. Altogether, the high-quality Heusler compounds allow control over the band structure and therefore the channel for spin angular momentum dissipation.

Pattern generation and symbolic dynamics in a nanocontact vortex oscillator.

Harnessing chaos or intrinsic nonlinear behaviours of dynamical systems is a promising avenue toward unconventional information processing technologies. In this light, spintronic devices are promising because of the inherent nonlinearity of magnetization dynamics. Here, we demonstrate experimentally the potential for chaos-based schemes using nanocontact vortex oscillators by unveiling and characterizing their waveform patterns and symbolic dynamics using time-resolved electrical measurements. We dissociate nonlinear deterministic patterns from thermal fluctuations and show that the emergence of chaos results in the unpredictable alternation of well-defined patterns. With phase-space reconstruction techniques, we perform symbolic analyses of the time series and show that the oscillator exhibits maximal entropy and complexity at the centre of its incommensurate region. This suggests that such vortex-based systems are promising nanoscale sources of entropy that could be exploited for information processing.

Chaos in Magnetic Nanocontact Vortex Oscillators.

We present an experimental study of spin-torque driven vortex self-oscillations in magnetic nanocontacts. We find that, above a certain threshold in applied currents, the vortex gyration around the nanocontact is modulated by relaxation oscillations, which involve periodic reversals of the vortex core. This modulation leads to the appearance of commensurate but also, more interestingly here, incommensurate states, which are characterized by devil's staircases in the modulation frequency. We use frequency- and time-domain measurements together with advanced time-series analyses to provide experimental evidence of chaos in incommensurate states of vortex oscillations, in agreement with theoretical predictions.

Femtosecond Laser-Excitation-Driven High Frequency Standing Spin Waves in Nanoscale Dielectric Thin Films of Iron Garnets.

We demonstrate that femtosecond laser pulses allow triggering high-frequency standing spin-wave modes in nanoscale thin films of a bismuth-substituted yttrium iron garnet. By varying the strength of the external magnetic field, we prove that two distinct branches of the dispersion relation are excited for all the modes. This is reflected in particular at a very weak magnetic field (∼33 mT) by a spin dynamics with a frequency up to 15 GHz, which is 15 times higher than the one associated with the ferromagnetic resonance mode. We argue that this phenomenon is triggered by ultrafast changes of the magnetic anisotropy via laser excitation of incoherent and coherent phonons. These findings open exciting prospects for ultrafast photo magnonics.

Evidence of Pure Spin-Current Generated by Spin Pumping in Interface-Localized States in Hybrid Metal-Silicon-Metal Vertical Structures.

Due to the difficulty of growing high-quality semiconductors on ferromagnetic metals, the study of spin diffusion transport in Si was limited to lateral geometry devices. In this work, by using an ultrahigh-vacuum wafer-bonding technique, we have successfully fabricated metal-semiconductor-metal CoFeB/MgO/Si/Pt vertical structures. We hereby demonstrate pure spin-current injection and transport in the perpendicular current flow geometry over a distance larger than 2 µm in n-type Si at room temperature. In those experiments, a pure propagating spin current is generated via ferromagnetic resonance spin pumping and converted into a measurable voltage by using the inverse spin Hall effect occurring in the top Pt layer. A systematic study varying both Si and MgO thicknesses reveals the important role played by the localized states at the MgO-Si interface for the spin-current generation. Proximity effects involving indirect exchange interactions between the ferromagnet and the MgO-Si interface states appears to be a prerequisite to establishing the necessary out-of-equilibrium spin population in Si under the spin-pumping action.

Electrical spin injection and detection in molybdenum disulfide multilayer channel.

Molybdenum disulfide has recently emerged as a promising two-dimensional semiconducting material for nano-electronic, opto-electronic and spintronic applications. However, the demonstration of an electron spin transport through a semiconducting MoS2 channel remains challenging. Here we show the evidence of the electrical spin injection and detection in the conduction band of a multilayer MoS2 semiconducting channel using a two-terminal spin-valve configuration geometry. A magnetoresistance around 1% has been observed through a 450 nm long, 6 monolayer thick MoS2 channel with a Co/MgO tunnelling spin injector and detector. It is found that keeping a good balance between the interface resistance and channel resistance is mandatory for the observation of the two-terminal magnetoresistance. Moreover, the electron spin-relaxation is found to be greatly suppressed in the multilayer MoS2 channel with an in-plane spin polarization. The long spin diffusion length (approximately ∼235 nm) could open a new avenue for spintronic applications using multilayer transition metal dichalcogenides.

Probing a Device's Active Atoms.

Materials science and device studies have, when implemented jointly as "operando" studies, better revealed the causal link between the properties of the device's materials and its operation, with applications ranging from gas sensing to information and energy technologies. Here, as a further step that maximizes this causal link, the paper focuses on the electronic properties of those atoms that drive a device's operation by using it to read out the materials property. It is demonstrated how this method can reveal insight into the operation of a macroscale, industrial-grade microelectronic device on the atomic level. A magnetic tunnel junction's (MTJ's) current, which involves charge transport across different atomic species and interfaces, is measured while these atoms absorb soft X-rays with synchrotron-grade brilliance. X-ray absorption is found to affect magnetotransport when the photon energy and linear polarization are tuned to excite FeO bonds parallel to the MTJ's interfaces. This explicit link between the device's spintronic performance and these FeO bonds, although predicted, challenges conventional wisdom on their detrimental spintronic impact. The technique opens interdisciplinary possibilities to directly probe the role of different atomic species on device operation, and shall considerably simplify the materials science iterations within device research.